Electronic and Vibrational Properties of GeSn and SiGeSn Alloys
Electronic Properties of GeSn, Vibrational Properties of GeSn, Electronic Properties of SiGeSn,Vibrational Properties of SiGeSn
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GeSn and SiGeSn alloys posses an intriguing potential for IR optoelectronics and photovoltaic applications. This book reports a detailed compositional study of the electronic and vibrational properties of GeSn and SiGeSn alloys. The various optical transition energies in the electronic band structure of the alloys are obtained by spectroscopic ellipsometry and photoreflectance. From the analysis, GeSn alloys are predicted to be a direct gap material for Sn concentration as low as 6-11 %. The bowing of optical transitions in GeSn and SiGeSn alloys is found to scale with the atomic size mismatch...
GeSn and SiGeSn alloys posses an intriguing
potential for IR optoelectronics and photovoltaic
applications. This book reports a detailed
compositional study of the electronic and
vibrational properties of GeSn and SiGeSn alloys.
The various optical transition energies in the
electronic band structure of the alloys are obtained
by spectroscopic ellipsometry and photoreflectance.
From the analysis, GeSn alloys are predicted to be a
direct gap material for Sn concentration as low as 6-
11 %. The bowing of optical transitions in GeSn and
SiGeSn alloys is found to scale with the atomic size
mismatch and electronegativity difference between
Si, Ge and -Sn. The Raman spectra of GeSn alloys
show two optical modes and two disorder-activated
modes. The Raman spectra of SiGeSn alloys are SiGe
like and the compositional dependence of vibrations
can be expressed in terms of the corresponding
vibrations in the binaries constituting the ternary
alloys. This experimental work should be useful to
scientists and engineers in the semiconductor field
and to anyone who is interested in learning the
basic optical properties of these novel materials.
potential for IR optoelectronics and photovoltaic
applications. This book reports a detailed
compositional study of the electronic and
vibrational properties of GeSn and SiGeSn alloys.
The various optical transition energies in the
electronic band structure of the alloys are obtained
by spectroscopic ellipsometry and photoreflectance.
From the analysis, GeSn alloys are predicted to be a
direct gap material for Sn concentration as low as 6-
11 %. The bowing of optical transitions in GeSn and
SiGeSn alloys is found to scale with the atomic size
mismatch and electronegativity difference between
Si, Ge and -Sn. The Raman spectra of GeSn alloys
show two optical modes and two disorder-activated
modes. The Raman spectra of SiGeSn alloys are SiGe
like and the compositional dependence of vibrations
can be expressed in terms of the corresponding
vibrations in the binaries constituting the ternary
alloys. This experimental work should be useful to
scientists and engineers in the semiconductor field
and to anyone who is interested in learning the
basic optical properties of these novel materials.
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