Electron Transport In Bulk n-GaN And In Heterojunction Of AlGaN/GaN
Aparna Chakraborty
Broschiertes Buch

Electron Transport In Bulk n-GaN And In Heterojunction Of AlGaN/GaN

Effects of dislocation in electron transport

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The author has investigated the effect of dislocations on thermoelectric properties of n- GaN based on two layer model and developed a model for calculation of the Seebeck coefficient, the thermal conductivity and the Figure of merit of n-GaN for the bulk n-GaN considering the two layer model. The effect of band quantization on the transport properties of n-GaN based on two layer model has been investigated. The variation of electronic conductivity with high magnetic field under the extreme quantum limit has been studied. The effect of dislocation in n-GaN on the Seebeck coefficient has been s...