Dislocation and strain relaxation at III-V semiconductor interface
Yi Wang
Broschiertes Buch

Dislocation and strain relaxation at III-V semiconductor interface

A TEM and theoretical study

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The misfit dislocations and strain relaxation play a critical role in growth of high quality Sb-based III-V hetero-structures, which is of great interest for applications in the near- and far-infrared optoelectronics and ultra-high speed low-power consumption electronics. The aim of this work is to carry out an extensive TEM investigation of Sb-based III-V layer on the GaAs (or GaP) substrates and especially try to point out the relationship between the misfit dislocations types, strain relaxation, and the misfit dislocation formation mechanism. This book includes an introduction of this resea...