Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
Muhammed Shibib
Broschiertes Buch

Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Versandkostenfrei!
Versandfertig in 1-2 Wochen
70,99 €
inkl. MwSt.
Weitere Ausgaben:
PAYBACK Punkte
35 °P sammeln!
Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices. A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi- Dirac statistics, a phenomenological excess intrinsic carrier density (or d...