Development and properties of Zirconia and Titania Derived Materials
for High-K Gate Dielectrics
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The semiconductor industry is in search of new materials that will aid in the miniaturization of electronic devices. High - k dielectrics will greatly reduce gate leakage current in CMOS circuit and will enable future low power processors. (Ba/Sr/Ca/Zn/Mg) Titanates and Zirconates are systems with high dielectric constant and low loss. They have many applications in the field of microwave electronics. Different compositions of titanates and zirconates are prepared by a modified combustion method. The prepared materials are characterized by X-ray Diffraction (XRD) method, transmission electron ...
The semiconductor industry is in search of new materials that will aid in the miniaturization of electronic devices. High - k dielectrics will greatly reduce gate leakage current in CMOS circuit and will enable future low power processors. (Ba/Sr/Ca/Zn/Mg) Titanates and Zirconates are systems with high dielectric constant and low loss. They have many applications in the field of microwave electronics. Different compositions of titanates and zirconates are prepared by a modified combustion method. The prepared materials are characterized by X-ray Diffraction (XRD) method, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and vibrational spectroscopy. The band gap of the developed materials is determined using UV- Vis spectrophotometer. The photoluminescent properties are studied using a spectrophotometer. The dielectric properties are measured using an LCR meter.
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