Design Of Low Noise , Narrow And Wideband Amplifier : Basic Concepts
LNA Design Using RF BJT
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Design of LNA at the 1 Ghz frequency i.e L band application is quite different from the fundamentals of design of Normal Amplifier. For essential of Microwave Amplifier Design first step is biasing of the transistor for the area of interest frequency so we need to design the biasing network of the transistor and there is also consideration of the S parameter and Noise Parameter analysis while settling the q point of the transistor so it is much tedious and time taking process so nowadays here there is a facility of S parameter file i.e S2P file in which all the data of S parameter and Noise Pa...
Design of LNA at the 1 Ghz frequency i.e L band application is quite different from the fundamentals of design of Normal Amplifier. For essential of Microwave Amplifier Design first step is biasing of the transistor for the area of interest frequency so we need to design the biasing network of the transistor and there is also consideration of the S parameter and Noise Parameter analysis while settling the q point of the transistor so it is much tedious and time taking process so nowadays here there is a facility of S parameter file i.e S2P file in which all the data of S parameter and Noise Parameter is included with Q Point of the Transistor and so we can directly apply input matching and output matching circuit and simulate the results so here we are using the same concept of S2P file model of different RF BJT and we can design the LNA for the desired frequency. Design methodology of LNA is based on the S2P file method and we can fill that by using RF BJT BFU710F we get the competent results for the frequency range of 1Ghz. Here we can choose another RF BJT BFU910F which is also one of the authenticate RF Product from the NXP SEMICONDUCTOR (PHILIPS).
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