Crystal Growth and Characterization
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The growth of one semiconductor on another known as Heteroepitaxy process which developed the production of a wide range of what so-called heteroepitaxial devices, such as high-brightness light-emitting diodes, lasers, and high frequency transistors. The development of devices using other materials is based on the choice of the substrate and is represented by the combination epitaxial layer/substrate. This combination using the growth process requires the realizing at the maximum the chemical and crystallographic compatibility in which the crystallographic orientation of the layer is exactly d...
The growth of one semiconductor on another known as Heteroepitaxy process which developed the production of a wide range of what so-called heteroepitaxial devices, such as high-brightness light-emitting diodes, lasers, and high frequency transistors. The development of devices using other materials is based on the choice of the substrate and is represented by the combination epitaxial layer/substrate. This combination using the growth process requires the realizing at the maximum the chemical and crystallographic compatibility in which the crystallographic orientation of the layer is exactly determined by the substrate crystal. The surface structure of the substrate crystal can have an important effect on the properties of the epitaxial crystal. In the other hand, homoepitaxy is another process differs from Heteroepitaxy, if substrate and layer are of the same chemical composition we speak of homoepitaxy such as GaAs/GaAs, and we speak of Heteroepitaxy, if the layer /substrate have different chemical composition such as InP/GaAs. This materials used to product LEDs high quality devises and transistors of high mobility.
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