Compact Modeling for MOSFET Devices
Small-Signal Models for Multiple-Gate Transistors
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Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit char...
Compact models of devices are used in circuit
simulators, in order to predict the functionality of
circuits. Multiple-gate devices will be preferred in
nanoscale circuits, thus calling for accurate and
reliable compact models, an important prerequisite
for successful circuit design.
In this book we present explicit compact charge and
capacitance models adapted for doped and undoped
devices (doped Double-Gate (DG) MOSFETs, undoped DG
MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and
undoped Surrounding-Gate Transistors (SGTs)). The
main advantage of our work is the analytical and
explicit character of the charge and capacitance
model that makes it easy to be implemented in
circuit simulators.
We also show the impact of important geometrical
parameters such as source and drain thickness, fin
spacing, spacer width, on the parasitic fringing
capacitance component of FinFETs and PI-gate
MOSFETs.
simulators, in order to predict the functionality of
circuits. Multiple-gate devices will be preferred in
nanoscale circuits, thus calling for accurate and
reliable compact models, an important prerequisite
for successful circuit design.
In this book we present explicit compact charge and
capacitance models adapted for doped and undoped
devices (doped Double-Gate (DG) MOSFETs, undoped DG
MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and
undoped Surrounding-Gate Transistors (SGTs)). The
main advantage of our work is the analytical and
explicit character of the charge and capacitance
model that makes it easy to be implemented in
circuit simulators.
We also show the impact of important geometrical
parameters such as source and drain thickness, fin
spacing, spacer width, on the parasitic fringing
capacitance component of FinFETs and PI-gate
MOSFETs.
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