Characterization of Single Photon Avalanche Diode in CMOS Technology
Yevgeny Khasin
Broschiertes Buch

Characterization of Single Photon Avalanche Diode in CMOS Technology

Design and characterization of a high performance Single Photon Avalanche Diode in standard CMOS technology

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This research focuses on the design and characterization of a high performance single element of SPAD in state of the art standard deep sub-micrometer CMOS technology. This standard CMOS technology is the key factor of lowering the cost of the CMOS SPAD Imagers. Special effort was put on achieving the correct design for minimizing the detector's noise, which in SPADs termed as the Dark Count Rate (DCR), and maximizing its quantum efficiency, termed Photon detection efficiency (PDE). The tested designs were fabricated in standard 180nm CMOS technology. The electro-optical measurements and chara...