Characteristic of RTD for Different Parameters and Material Properties

Characteristic of RTD for Different Parameters and Material Properties

Influence on Characteristics of RTD due to variation of different Parameters and Material Properties

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Simulation of larger device structure is difficult due to meshing problem and is too time consuming. So, a small structure is simulated as replica of a larger one to investigate the qualitative features. Higher figures of merit (PVR) may be conveniently realized for the GaInAs/A1InAs system. Constructional features for these diodes are the same as for the GaAs/GaAlAs systems. Only GaInAs replaces GaAs and AlInAs replaces GaAlAs. The improvement for this system is essentially due to a larger value of the barrier potential and lower value of the effective mass in the well.Further improvement in ...