Built in polarization and thermal property of AlGaN/GaN heterostructure
Bijay Kumar Sahoo
Broschiertes Buch

Built in polarization and thermal property of AlGaN/GaN heterostructure

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Nitride heterostructures are of outstanding current interest for a wide range of device applications. AlxGa1-xN/GaN heterostructure devices operate at high power and high frequencies. Therefore, strong self-heating effect is expected in the AlGaN/GaN heterostrucure. The physical phenomena responsible for the self-heating effect and properties that can minimize the effect should be explored. The intensity of polarization field at the interface of AlGaN/GaN heterostructure is of the order of several MV/cm. These fields are common feature of nitride heterostructures which significantly influences...