Analytical Physics Based AlGaN/GaN HFET RF Large Signal Model
Yueying Liu
Broschiertes Buch

Analytical Physics Based AlGaN/GaN HFET RF Large Signal Model

Nonlinearity Analysis with the Impact of Nonlinear Source Resistance and RF Breakdown

Versandkostenfrei!
Versandfertig in 6-10 Tagen
32,99 €
inkl. MwSt.
PAYBACK Punkte
16 °P sammeln!
AlGaN/GaN HFETs are well known strong candidates for high power devices due to superior material properties of the nitrides. Practical amplifiers, however, do not demonstrate the good RF linearity performance predicted from fundamental semiconductor materials properties. In particular, it has been demonstrated that a nonlinear source resistance is generated in these devices due to the onset of space-charge limited (SCL) transport in the gate-source region. In this work a physics based large signal FET model was modified to include the nonlinear source resistance effect and RF channel breakdown...