An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
James M. Sattler
Broschiertes Buch

An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors

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The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6??1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measure...