Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Broschiertes Buch

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Versandkostenfrei!
Versandfertig in 6-10 Tagen
51,99 €
inkl. MwSt.
PAYBACK Punkte
26 °P sammeln!
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and...