Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory,…mehr
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.
Inhaltsangabe
Zero- and Two-Dimensional Native Defects - Defect Migration and Annealing Mechanisms - Hydrogen in SiC - Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes - Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation - Defect Formation and Reduction during Bulk SiC Growth - High Nitrogen Doping During Bulk Growth of SiC - Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas - Low-Defect 3D-SiC Grown on Undulant-Si (001) Substrates - New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide - Formation of SiC Thin Films by Ion Beam Synthesis - Atomic Structure of SiC Surfaces - The Continuum of Interface-Induced Gap States - Contributions to the Density of Interface States in SiC MOS Structures - Properties of Nitrided Oxides on SiC - Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface - Optical Properties of SiC - Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC - Electronic Structure of Deep Defects in SiC - Phosphorus-Related Centers in SiC - Hall Scattering Factor for Electrons and Holes in SiC - Radiotracer Deep Level Transient Spectroscopy - Vacancy Defects Detected by Positron Annihilation - Characterization of Defects in SiC Crystals by Raman Scattering - Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy - Synchrotron White Beam X-ray Topography and High Resolution X-ray Diffraction Studies - Ohmic Contacts for Power Devices on SiC - Micromachining of SiC - Surface Preparation Techniques for SiC Wafers - Epitaxial Growth and Device Processing of SiC on Non-Basal Planes - SiC Power Bipolar Transistors and Thyristors - High-Voltage SiC Devices - Power MOSFETs in 4H-SiC - Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor - Development of SiC Devices for Microwave and RF Power Amplifiers - Advances in SiC Field Effect Gas Sensors
Zero- and Two-Dimensional Native Defects - Defect Migration and Annealing Mechanisms - Hydrogen in SiC - Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes - Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation - Defect Formation and Reduction during Bulk SiC Growth - High Nitrogen Doping During Bulk Growth of SiC - Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas - Low-Defect 3D-SiC Grown on Undulant-Si (001) Substrates - New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide - Formation of SiC Thin Films by Ion Beam Synthesis - Atomic Structure of SiC Surfaces - The Continuum of Interface-Induced Gap States - Contributions to the Density of Interface States in SiC MOS Structures - Properties of Nitrided Oxides on SiC - Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface - Optical Properties of SiC - Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC - Electronic Structure of Deep Defects in SiC - Phosphorus-Related Centers in SiC - Hall Scattering Factor for Electrons and Holes in SiC - Radiotracer Deep Level Transient Spectroscopy - Vacancy Defects Detected by Positron Annihilation - Characterization of Defects in SiC Crystals by Raman Scattering - Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy - Synchrotron White Beam X-ray Topography and High Resolution X-ray Diffraction Studies - Ohmic Contacts for Power Devices on SiC - Micromachining of SiC - Surface Preparation Techniques for SiC Wafers - Epitaxial Growth and Device Processing of SiC on Non-Basal Planes - SiC Power Bipolar Transistors and Thyristors - High-Voltage SiC Devices - Power MOSFETs in 4H-SiC - Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor - Development of SiC Devices for Microwave and RF Power Amplifiers - Advances in SiC Field Effect Gas Sensors
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