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In recent years, the field of self-assembled quantum dots has shown great promise for nanoscale applications in optoelectronics and quantum computing. Worldwide efforts in both theory and experimental investigations have driven the growth, characterization, and applications of quantum dots into an advanced multidisciplinary field. Written by leading experts in the field, Self-Assembled Quantum Dots provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Topics also includes current device applications such as quantum dot…mehr

Produktbeschreibung
In recent years, the field of self-assembled quantum dots has shown great promise for nanoscale applications in optoelectronics and quantum computing. Worldwide efforts in both theory and experimental investigations have driven the growth, characterization, and applications of quantum dots into an advanced multidisciplinary field. Written by leading experts in the field, Self-Assembled Quantum Dots provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Topics also includes current device applications such as quantum dot lasers and detectors as well as future applications to quantum information processing. TOC:InAs/GaAs Quantum Dots with multimodal Size Distribution.- Capacitance Voltage Spectroscopy of InAs Quantum Dots.- Dynamics of carrier transfer into In(Ga)As self-assembled quantum dots.- Spin phenomena in self-assembled quantum dots.- Studies of Semiconductor Quantum Dots for Quantum Information Processing.- In(Ga)As/GaAs quantum dots grown by MOCVD for opto-electronic device applications.- Excitons and spins in quantum dots coupled to a continuum of states.- Quantum Coupling in Quantum Dot Molecules.- Stress relaxation phenomena in buried quantum dots.- Carrier transfer in the arrays of coupled quantum dots.- Detailed analysis of the shape-dependent deformation field in 3D Ge islands on Si(001).- Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters.- Metal-Mask MBE technique for selective-area-growth of InAs quantum dots towards optical integrated circuit applications.

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  • Produktdetails
  • Verlag: Springer-Verlag GmbH
  • Erscheinungstermin: 29. November 2007
  • Englisch
  • ISBN-13: 9780387741918
  • Artikelnr.: 37286803
Inhaltsangabe
InAs/GaAs Quantum Dots with multimodal Size Distribution. -Capacitance Voltage Spectroscopy of InAs Quantum Dots. -Dynamics of carrier transfer into In(Ga)As self-assembled quantum dots. -Spin phenomena in self-assembled quantum dots. -Studies of Semiconductor Quantum Dots for Quantum Information Processing. -In(Ga)As/GaAs quantum dots grown by MOCVD for opto-electronic device applications. -Excitons and spins in quantum dots coupled to a continuum of states. -Quantum Coupling in Quantum Dot Molecules. -Stress relaxation phenomena in buried quantum dots. -Carrier transfer in the arrays of coupled quantum dots. -Detailed analysis of the shape-dependent deformation field in 3D Ge islands on Si(001. -Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters. -Metal-Mask MBE technique for selective-area-growth of InAs quantum dots towards optical integrated circuit applications.