Pierre-Camille Lacaze, Jean-Claude Lacroix

Non-Volatile Memories

• Gebundenes Buch

Produktbeschreibung

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Produktdetails

• ISTE
• Verlag: Wiley & Sons
• 1. Auflage
• Seitenzahl: 304
• Erscheinungstermin: 6. April 2015
• Englisch
• Abmessung: 240mm x 161mm x 21mm
• Gewicht: 624g
• ISBN-13: 9781848216235
• ISBN-10: 1848216238
• Artikelnr.: 40195780

Autorenporträt

Pierre Camille Lacaze, Emeritus Professor, Université Denis Diderot, Paris, France. Jean-Christophe?Lacroix, Professor, Université Denis Diderot, Paris, France.

Inhaltsangabe

ACKNOWLEDGEMENTS xi PREFACE xiii PART 1. INFORMATION STORAGE AND THE STATE
OF THE ART OF ELECTRONIC MEMORIES 1 CHAPTER 1. GENERAL ISSUES RELATED TO
DATA STORAGE AND ANALYSIS CLASSIFICATION OF MEMORIES AND RELATED
PERSPECTIVES 3 1.1. Issues arising from the flow of digital information 3
1.2. Current electronic memories and their classification 5 1.3. Memories
of the future 8 CHAPTER 2. STATE OF THE ART OF DRAM, SRAM, FLASH, HDD AND
MRAM ELECTRONIC MEMORIES 13 2.1. DRAM volatile memories 13 2.1.1. The
operating principle of a MOSFET (metal oxide semiconductor field effect
transistor) 14 2.1.2. Operating characteristics of DRAM memories 17 2.2.
SRAM memories 19 2.3. Non-volatile memories related to CMOS technology 22
2.3.1. Operational characteristics of a floating gate MOSFET 22 2.3.2.
Flash memories 38 2.4. Non-volatile magnetic memories (hard disk drives -
HDDs and MRAMs) 45 2.4.1. The discovery of giant magneto resistance at the
origin of the spread of hard disk drives 46 2.4.2. Spin valves 49 2.4.3.
Magnetic tunnel junctions 51 2.4.4. Operational characteristics of a hard
disk drive (HDD) 51 2.4.5. Characteristics of a magnetic random access
memory (MRAM) 54 2.5. Conclusion 56 CHAPTER 3. EVOLUTION OF SSD TOWARD
FERAM, FEFET, CTM AND STT-RAM MEMORIES 59 3.1. Evolution of DRAMs toward
ferroelectric FeRAMs 60 3.1.1. Characteristics of a ferroelectric material
60 3.1.2. Principle of an FeRAM memory 63 3.1.3. Characteristics of an
FeFET memory 67 3.2. The evolution of Flash memories towards charge trap
memories (CTM) 77 3.3. The evolution of magnetic memories (MRAM) toward
spin torque transfer memories (STT-RAM) 82 3.3.1. Nanomagnetism and
experimental implications 83 3.3.2. Characteristics of spin torque transfer
84 3.3.3. Recent evolution with use of perpendicular magnetic anisotropic
materials 88 3.4. Conclusions 90 PART 2. THE EMERGENCE OF NEW CONCEPTS: THE
INORGANIC NEMS, PCRAM, RERAM AND ORGANIC MEMORIES 93 CHAPTER 4. VOLATILE
AND NON-VOLATILE MEMORIES BASED ON NEMS 95 4.1. Nanoelectromechanical
switches with two electrodes 96 4.1.1. NEMS with cantilevers 97 4.1.2. NEMS
with suspended bridge 102 4.1.3. Crossed carbon nanotube networks 103 4.2.
NEMS switches with three electrodes 106 4.2.1. Cantilever switch elaborated
by lithographic techniques 107 4.2.2. Nanoswitches with carbon nanotubes
110 4.2.3. NEMS-FET hybrid memories with a mobile floating gate or mobile
cantilever 116 4.4. Conclusion 121 CHAPTER 5. NON-VOLATILE PHASE-CHANGE
ELECTRONIC MEMORIES (PCRAM) 123 5.1. Operation of an electronic
phase-change memory 125 5.1.1. Composition and functioning of a GST PCRAM
125 5.1.2. The antinomy between the high resistance of the amorphous state
and rapid heating 129 5.2. Comparison of physicochemical characteristics of
a few phase-change materials 134 5.3. Key factors for optimized
performances of PCM memories 137 5.3.1. Influence of cell geometry on the
current Im needed for crystal melting 138 5.3.2. Optimization of
phase-change alloy composition to improve performance 143 5.3.3. Influence
of nanostructuration of the phase-change material 148 5.3.4. Recent
techniques for improvement of amorphization and crystallization rates of
phase-change materials 156 5.3.5. Problems related to interconnection of
PCRAM cells in a 3D crossbar-type architecture 160 5.4. Conclusion 162
CHAPTER 6. RESISTIVE MEMORY SYSTEMS (RRAM) 165 6.1. Main characteristics of
resistive memories 168 6.1.1. Unipolar system 169 6.1.2. Bipolar system 170
6.2. Electrochemical metallization memories 171 6.2.1. Atomic switches 174
6.2.2. Metallization memories with an insulator or a semiconductor 177
6.2.3. Conclusions on metallization memories 182 6.3. Resistive valence
change memories (VCM) 183 6.3.1. The first work on resistive memories 183
6.3.2. Resistive valence change memories after the 2000s 185 6.3.3. A
perovskite resistive memory (SrZrO3) with better performance than Flash
memories 186 6.3.4. Electroforming and resistive switching 189 6.3.5.
Hafnium oxide for universal resistive memories? 195 6.4. Conclusion 198
CHAPTER 7. ORGANIC AND NON-VOLATILE ELECTRONIC MEMORIES 201 7.1. Flash-type
organic memories 204 7.1.1. Flexible FG-OFET device with metal floating
gate 205 7.1.2. Flexible organic FG-OFET entirely elaborated by spin
coating and inkjet printing 212 7.1.3. Flexible OFETs with charge-trap gate
dielectrics 216 7.1.4. OFETs with conductive nanoparticles encapsulated in
the gate dielectric 221 7.1.5. Redox dielectric OFETs 226 7.2. Resistive
organic memories with two contacts 230 7.2.1. Organic memories based on
electrochemical metallization 232 7.2.2. Resistive charge-trap organic
memories 238 7.3. Molecular memories 244 7.4. Conclusion 248 CONCLUSION 251
BIBLIOGRAPHY 255 INDEX 285