Takahiro Nagata

Nanoscale Redox Reaction at Metal/Oxide Interface

A Case Study on Schottky Contact and ReRAM

• Broschiertes Buch

Produktbeschreibung

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

Produktdetails

• NIMS Monographs
• Verlag: Springer / Springer Japan / Springer, Berlin
• Artikelnr. des Verlages: 978-4-431-54849-2
• 1st ed. 2020
• Erscheinungstermin: 22. Mai 2020
• Englisch
• Abmessung: 235mm x 155mm x 7mm
• Gewicht: 178g
• ISBN-13: 9784431548492
• ISBN-10: 4431548491
• Artikelnr.: 40188818

Autorenporträt

Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.

Inhaltsangabe

General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.