Fundamentals of Power Semiconductor Devices - Baliga, B. Jayant
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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community. …mehr

Produktbeschreibung
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
  • Produktdetails
  • Verlag: Springer / Springer US / Springer, Berlin
  • Artikelnr. des Verlages: 978-1-4899-7765-6
  • Softcover reprint of the original 1st ed. 2008
  • Seitenzahl: 1096
  • Erscheinungstermin: 23. August 2016
  • Englisch
  • Abmessung: 235mm x 155mm x 58mm
  • Gewicht: 1623g
  • ISBN-13: 9781489977656
  • ISBN-10: 1489977651
  • Artikelnr.: 45667406
Inhaltsangabe
Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.