Jerry G. Fossum

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs (eBook, PDF)

• Format: PDF

Produktbeschreibung

Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * Describes FD/SOI MOSFETs and 3-D FinFETs in detail * Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM * Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time * Projects potential nanoscale UTB CMOS performances * Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

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Produktdetails

• Verlag: Cambridge University Press
• Erscheinungstermin: 29. August 2013
• Englisch
• ISBN-13: 9781107439610
• Artikelnr.: 39477581

Autorenporträt

Jerry G. Fossum is Distinguished Professor Emeritus of Electrical and Computer Engineering at the University of Florida, Gainesville, and a Fellow of the IEEE. He won the IEEE/EDS J. J. Ebers Award in 2004 for 'outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling'.

Inhaltsangabe

Preface
List of physical constants
List of symbols
1. Introduction
2. Unique features of UTB MOSFETs
3. Planar fully depleted SOI MOSFETs
4. FinFETs
Appendix: UFDG
References
Index.