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This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a…mehr

Produktbeschreibung
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Autorenporträt
* Gerhard Pensl works with his group on the growth of SiC single crystals for high power applications, its electrical and optical characterization, and the investigations on multicrystalline Si for solar cells. Mr Pensl is Professor of Physics and Director of the Department of Applied Physics at the Erlangen University. * Lothar Ley is Professor at the University of Erlangen and Head of the Department of Technical Physics. Alongside their experimental research on SiC, his group also works on Diamonds and Carbon Nanotubes. * Dr. Peter Friedrichs is Managing Director at SiCED, a Siemens Company located in Erlangen. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation as well as the characterization of devices via end of life tests. * Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, has dedicated his work to growth and characterization of wide bandgap semiconductors and the fabrication process of SiC devices. He is holding a patent on the manufacturing of Lateral Junciton FETs.