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The main goal of this work presented in this book was to fabricate nanostructures of GaN using two low-coast electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category, the porous GaN was generated using photoelectrochemical etching techniques under different conditions. In the second category, GaN thin films were synthesized by a low-cost (ECD) technique using an aqueous solution. Two devices were fabricated, hydrogen gas sensors and MSM photodetectors. The Pd/porous GaN Schottky diode exhibited a dramatic change of…mehr

Produktbeschreibung
The main goal of this work presented in this book was to fabricate nanostructures of GaN using two low-coast electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category, the porous GaN was generated using photoelectrochemical etching techniques under different conditions. In the second category, GaN thin films were synthesized by a low-cost (ECD) technique using an aqueous solution. Two devices were fabricated, hydrogen gas sensors and MSM photodetectors. The Pd/porous GaN Schottky diode exhibited a dramatic change of current after the exposure to H2 gas as compared to the Pd/as grown GaN Schottky diode.
Autorenporträt
Khalled Al-Heuseen received the B.Sc. degree and the Master's degree in Physics, both from Yarmouk University-Jordan in 1990 and 1993, respectively. He received his PhD degree in 2011 from the Universiti Sains Malaysia. Currently, he is an assistant professor at Al-Balqä, Applied University, Ajloun University College, Jordan.