Decreasing the resistivity of back contact layer of CdTe solar cell
Project was to increase the efficiency of CdTe solar cell from its threshold value of 16.5% by dopant addition to ZnTe back contact layer
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The initial part of the book discuses'' the literature surveys which have been used for the guidance of research work and the parameters used to select the three dopants. The selection was carried out using two criterions. Firstly, their elemental resistivity was compared with those for whom the decrease in resistivity of ZnTe was reported. Secondly, their crystal structures were also compared in the same fashion. The next major portion of the book discuses'' the experiment path followed and the results achieved. The experiment section report''s about the sample preparation, which was carried ...
The initial part of the book discuses'' the literature surveys which have been used for the guidance of research work and the parameters used to select the three dopants. The selection was carried out using two criterions. Firstly, their elemental resistivity was compared with those for whom the decrease in resistivity of ZnTe was reported. Secondly, their crystal structures were also compared in the same fashion. The next major portion of the book discuses'' the experiment path followed and the results achieved. The experiment section report''s about the sample preparation, which was carried out using a physical vapor deposition method followed by their heat treatment. Sputtering could not be used due to its limitation on the deposition thickness. The characterizations which followed served their purpose in determining the phases formed during doping, the size of grains, the resistivity achieved in relation to the hole concentration and hole mobility of each dopant and the surface morphology of the depositions. Lastly, the report concludes by discussing the results.
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