Optical Characterization and Modeling of Compositionally Matched Indium Arsenide-Antimonide Bulk and Multiple Quantum Well Semiconductors
Scott C. Phillips
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Optical Characterization and Modeling of Compositionally Matched Indium Arsenide-Antimonide Bulk and Multiple Quantum Well Semiconductors

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Indium arsenide-antimonide (InAs1-xSbx) semiconductors have been determined to emit in the 3-5?m range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the bandgap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of t...