Non-Boolean Computing with Spintronic Devices

Non-Boolean Computing with Spintronic Devices

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One of the most promising emerging non-volatile memories is magnetic tunnel junction (MTJ); this is a Spintronic element where electronic charge and spin are both used for storing and manipulating digital information. Indeed, many companies have proposed this as a universal memory targeting embedded RAM, DRAM, and storage class memory domains primarily due to features like non-volatility, ultra-low power consumption, high endurance, rad-hardness, etc. However, the increasingly popular data-centric approach for solving non-Boolean problems, often called in memory computing, may also benefit by ...