Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures Using Micro-Raman Spectroscopy
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Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. Thiswide bandgap semiconductor material is being considered by the Air Force ResearchLaboratory for the fabrication of shock-hardened MEMS accelerometers.
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